Features:

Memory clock speed: 2666 MHz

Memory voltage: 1.2 V

Row active time: 32 ns

Backlight: No

JEDEC standard: Yes

Programming power voltage (VPP): 2.5 V

Refresh row cycle time: 350 ns

Buffered memory type: Unregistered (unbuffered)

CAS latency: 19

SPD profile: Yes

Internal memory: 32 GB

Memory form factor: SO-DIMM ECC

Internal memory type: DDR4

ECC: Yes

Memory ranking: 2

Chips organisation: 2Rx8

Row cycle time: 45.75 ns

On-Die ECC: Yes

Operational conditions:

Storage temperature (T-T): -55 - 100 °C

Operating temperature (T-T): 0 - 85 °C